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Non-volatile memory using graphene oxide for flexible electronics

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4 Author(s)
Seul Ki Hong ; Dept. of Electrical Engineering, KAIST, Daejeon, Republic of Korea ; Ji-Eun Kim ; Sang Ouk Kim ; Byung Jin Cho

A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 nm thick GO shows On/Off current ratio of 103. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.

Published in:

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Date of Conference:

17-20 Aug. 2010