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Microwave/Millimeter-Wave Garnet Films

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3 Author(s)
Zhang, Huaiwu ; State Key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol., Chengdu, China ; Yang, Qinghui ; Feiming Bai

A buffer liquid phase epitaxy method for lead free flux technology has been used to grow large size garnet single-crystal films. Lu2.1Bi0.9Fe5O12 (Bi:LuIG) films with excellent lattice match with the Gd3Ga5O15 (GGG) substrate and superior magnetic and magnetic-optical properties have been obtained by optimizing liquid phase epitaxy (LPE) technology. The saturation magnetization of the film is about 1562 Gs, the Faraday rotation is 1.6 ~ 2.0 deg/μm and the minimum ferromagnetic resonance (FMR) linewidth is 2ΔH = 5.1 Oe. Secondly, the growth of polycrystalline garnet films by radio-frequency (RF) magnetron sputtering has be introduced, and the effects of buffer layer, sputtering parameters and post annealing on the performance of Y3Fe5O12 (YIG) films have been investigated in details. It will be shown that garnet films with smooth surface and adjustable saturation magnetization can be obtained by using a SiO2 buffer layer.

Published in:

Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 2 )