Scheduled System Maintenance:
On Wednesday, July 29th, IEEE Xplore will undergo scheduled maintenance from 7:00-9:00 AM ET (11:00-13:00 UTC). During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Analysis of Transconductance (g_{m}) in Schottky-Barrier MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sung-Jin Choi ; Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea ; Chel-Jong Choi ; Kim, Jee-Yeon ; Jang, Moongyu
more authors

This paper experimentally investigates the unique behavior of transconductance (gm) in the Schottky-barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of gm is observed. Thus, gm can be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of gm is observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the gm disappears, i.e., a complete transition from TE to TU can be enabled by the DS technique.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 2 )