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In this paper short channel and self heating effects in dopant segregated Schottky barrier (DSSB) silicon-on-insulator (SOI) MOSFET are investigated in sub-30 nm regime using two dimensional MEDICI simulator. In order to suppress these effects novel structures having dopant segregated Schottky source/drain (S/D) with buried oxide (BOX) only under S/D (DSSB Pi-OX) and DSSB Pi-OX with p-type delta doping in the oxide window formed under channel (DSSB Pi-OX-δ) have been proposed. The DSSB Pi-OX MOSFET is found better for reducing self heating effect but has worst short channel effects (SCE). On the other hand, DSSB Pi-OX-δ MOSFET not only reduces the self heating effect but also has SCE suppression better than DSSB SOI MOSFET. The extracted parasitic capacitances and S/D series resistance of DSSB SOI MOSFET and DSSB Pi-OX-δ MOSFET are found comparable to DSSB SOI MOSFET which shows that the performance advantages of DSSB SOI MOSFET are not affected with the proposed modification. The detailed fabrication flow of these novel devices is also proposed.