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Modeling of electronic transport in metallic carbon nanotube interconnects

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2 Author(s)
Parkash, V. ; Dept. of Electr. & Comput. Eng., Michigan Technol. Univ., Houghton, MI, USA ; Goel, K.

Metallic carbon nanotubes are being considered as a candidate for to potentially replace Copper as an interconnect material in future generation integrated circuits. In this paper we examine electronic transport behavior in metallic carbon nanotubes using a self consistent non equilibrium Green's function (NEGF) methodolgy including effects of electron phonon interactions Results show that conductivity is seen to decrease in the ballistic limit due to localized disorder effects even with a weak disorder potential. We were also able to show that optical phonons (LO/TO modes) are the dominant mechanisms that govern the mean free path of conduction. Our calculations show an excellent match with experiement.

Published in:

Microelectronics (ICM), 2010 International Conference on

Date of Conference:

19-22 Dec. 2010