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Scaling issues for p-i-n carbon nanotube FETs: A computational study

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2 Author(s)
Ossaimee, M. ; Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt ; Gamal, S.

Scaling study of p-i-n carbon nanotube field effect transistors (CNTFETs) is presented through numerical simulations based on a quantum-mechanical simulator. This simulator is based on a self-consistent solution of Poisson's equation and the carrier transport equation. Finite element method is used for solving Poisson's equation while the non-equilibrium Green's function (NEGF) formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of the device parameters on the device performance.

Published in:

Microelectronics (ICM), 2010 International Conference on

Date of Conference:

19-22 Dec. 2010

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