Scaling issues for p-i-n carbon nanotube FETs: A computational study

Scaling study of p-i-n carbon nanotube field effect transistors (CNTFETs) is presented through numerical simulations based on a quantum-mechanical simulator. This simulator is based on a self-consistent solution of Poisson's equation and the carrier transport equation. Finite element method is used for solving Poisson's equation while the non-equilibrium Green's function (NEGF) formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of the device parameters on the device performance.