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High-Performance GaNAsSb/GaAs 1.55- \mu\hbox {m} Waveguide Photodetector

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9 Author(s)
Z. Xu ; Centre National de la Recherche Scientifique (CNRS) International–Nanyang Technological University (NTU)–Thales Research Alliance (CINTRA CNRS/NTU/THALES), UMI 3288, Research Techno Plaza , Singapore ; N. Saadsaoud ; W. K. Loke ; K. H. Tan
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We report on the small-signal high-frequency response of a GaNAsSb/GaAs pin waveguide photodetector at 1.55-μm wavelength. The GaNAsSb absorbing layer with 3.5% N and 18% Sb is sandwiched by GaAs-cladding layers. The device of an 8-μm ridge width and 15-μm ridge length has a dc responsivity of 0.44 A/W and an 11-GHz cutoff frequency at 5-mW optical illumination at a bias condition of -5 V. A higher cutoff frequency of 14.3-GHz is achieved on the smallest device of 4-μm ridge width and 17-μm ridge length with a responsivity of 0.2 A/W at a reverse bias condition of -1 V.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 3 )