Piezotransistor-embedded microcantilever platform for strain sensing applications

This paper demonstrates the sensitivity analysis of a piezotransistor-embedded microcantilever sensor facilitated as platform for stress sensing applications. To enhance sensitivity and detection capability, different channel width-to-length aspect ratio transistors are designed and characterized under the mechanical strain at different gate bias. Higher sensitivity is found for the devices with lower channel width-to-length aspect ratio transistors. Specifically, the embedded PMOS with a channel width-to-length ratio of 2 exhibits 87% higher sensitivity than the one with a ratio of 5 at V
_G
= -4V. Results reveal useful design guidelines to enhance the sensitivity of MOSFET-embedded microcantilever sensors for various applications.