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150 ^{\circ} C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic

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4 Author(s)
Chan, I. ; Electr. Eng. Dept., Univ. of Waterloo, Waterloo, ON, Canada ; Moradi, M. ; Sazonov, A. ; Nathan, A.

This paper reports on hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) processed at 150°C using plasma-enhanced chemical vapor deposition on polyethylene naphthalate (PEN) transparent plastic substrates. We examine the impact of RF deposition power on film stress of amorphous silicon nitride (a-SiNx:H), and resulting TFT performance. Transistors with the lowest stress nitride, yield the best performance in terms of device mobility (~1.1 cm2/V·s), ON/OFF current ratio (~1010) , and gate leakage current (<; 0.1 pA). Stable TFTs are demonstrated with a threshold voltage shift of less than 0.8 V following 10 hours of DC bias stress at 10 V.

Published in:

Display Technology, Journal of  (Volume:7 ,  Issue: 1 )

Date of Publication:

Jan. 2011

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