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Dynamics of ONF-Based Three-QD Nanophotonic AND Gates at Finite Temperatures

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2 Author(s)
Karimkhani, A. ; Dept. of Electr. & Comput. Eng., Tarbiat Modares Univ., Tehran, Iran ; Moravvej-Farshi, Mohammad Kazem

In this paper, we have simulated the dynamic behavior of two-input nanophotonic AND gates at finite temperatures (0 K ≤ T ≤ 35 K). To the best of our knowledge, this is the first instance of reporting such numerical studies. It is shown that these nanophotonic switching gates can have two nontrivial OFF states ( OFFA and OFFB) at finite temperate, unlike that at T = 0 K with only one nontrivial OFF state (OFFA). It is also shown that the output level occupation probabilities for these AND gates in either OFF states increase with temperature. On the contrary, when these AND gates are in the ON state, the output level occupation probabilities decrease with temperature. Hence, the instantaneous and the effective ON/OFF ratios (for either OFF state) both decrease with temperature. Simulations show that the temperature dependence of the ON/OFFB|eff, ratio in the low-temperature region where ON/OFFA|eff <; ON/OFFB|eff, is much stronger than that for the ON/OFFB|eff, ratio.

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Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 2 )