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Browse Journals & Magazines > Applied Physics Letters ...> Volume:98 Issue:2 Help

Silicon concentration dependence of optical polarization in AlGaN epitaxial layers

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4 Author(s)
Murotani, Hideaki ; Department of Materials Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan ; Yamada, Yoichi ; Miyake, Hideto ; Hiramatsu, Kazumasa

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The optical polarization of Si-doped AlxGa1-xN epitaxial layers (x=0.37–0.95) has been studied by means of photoluminescence (PL) spectroscopy. The predominant polarization component of the band-edge PL switched from E⊥c to E||c at an Al composition between 0.68 and 0.81. This critical Al composition was much higher than in previous reports for AlGaN epitaxial layers. In addition, the predominant polarization in Al0.55Ga0.45N epitaxial layers switched from E⊥c to E||c with increasing Si concentration. Therefore, the topmost valence band changed from the heavy-hole band to the crystal-field split-off-hole band with decreasing in-plane compressive strain induced by Si doping.

Published in:
Applied Physics Letters  (Volume:98 ,  Issue: 2 )

Date of Publication: Jan 2011

Page(s):
021910 - 021910-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3543631
Product Type:
Journals & Magazines
Date of Current Version :
17 January 2011
Issue Date :
Jan 2011

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