Skip to Main Content
A new compact model approach was suggested in Part I for the low-bias base charge of homo- and heterojunction bipolar transistors. Conventional capacitance-charge formulas with dc extracted parameters were shown to provide accurate description for the Moll-Ross-Gummel charge components. New parameters were introduced to account for BGN effects and Ge doping on the temperature behavior of SiGe transistors. In this part, the implementation of the concept will be detailed for an unnormalized and a normalized heterojunction-bipolar-transistor/bipolar-junction-transistor model. Extraction methodology will be described for the new parameters, and the results will be demonstrated on advanced transistors.