Close category search window
 

Measurements and analysis of neutron-reaction-induced charges in a silicon surface region

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Tosaka, Y. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Satoh, S. ; Suzuki, K. ; Sugii, T.
more authors

We directly measured neutron-reaction-induced charges in the silicon surface region using silicon-on-insulator (SOI) test structures. Because the neutron beam used has an energy spectrum similar to that of sea-level atmospheric neutrons, our charge collection data correspond to those induced by cosmic ray neutrons. Measured charge collection spectra were dependent on the SOI thickness and agreed with simulated results. An application for the neutron-induced upset rate prediction was also discussed. Furthermore, the charge collection components were separated by our charge collection simulator

Published in:
Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 2 )

Date of Publication: Apr 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.