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Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process

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4 Author(s)
Ryu, S. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Kornegay, K.T. ; Cooper, J.A., Jr. ; Melloch, M.R.

We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flops, half adders, and 11-stage ring oscillators are implemented using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 5 )