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50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations

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6 Author(s)
Y. Omura ; NTT Syst. Electron. Lab., Atsugi, Japan ; K. Kurihara ; Y. Takahashi ; T. Ishiyama
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This paper demonstrates mesoscopic scale nMOSFET's fabricated by Separation by IMplanted OXygen (SIMOX) technology on a trial basis and describes their explicit quantum-mechanical transport phenomena: enhanced threshold voltage in an extremely thin silicon-on-insulator (SOI) structure and enhanced short-channel effect at room temperature as well as a weak interference (WI) effect at relatively high temperatures (/spl sim/40 K), which are characterized specifically in extremely thin SOI short-channel devices.

Published in:

IEEE Electron Device Letters  (Volume:18 ,  Issue: 5 )