Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma

Polysilicon thin-film transistors (poly-Si TFT's) with thin-gate oxide grown by electron cyclotron resonance (ECR) nitrous oxide (N/sub 2/O)-plasma oxidation is presented. ECR N/sub 2/O-plasma oxidation successfully incorporates nitrogen atoms at the SiO/sub 2//poly-Si interface, consequently forms a nitrogen-rich layer with Si/spl equiv/N bonds at a binding energy of 397.8 eV. ECR N/sub 2/O-plasma oxide grown on poly-Si films shows higher breakdown fields than thermal oxide. The fabricated poly-Si TFT's with N/sub 2/O-plasma oxide show better performance than those with ECR O/sub 2/-plasma oxide, which results not only from the smooth interface but also oxygen- and nitrogen-plasma passivation.