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3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems

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2 Author(s)
I-Chuan Chen ; Dept. of Commun. Eng., Yuan Ze Univ., Jhongli, Taiwan ; Jeng-Rern Yang

This study presents a 3-10GHz ultra-wideband low-noise amplifier (UWB LNA) with CMOS distributed amplification,(DA) featuring low power consumption, flat response, high gain (S21), and low noise figure (NF). The DA UWB LNA is designed with standard 0.18μm CMOS technology. Low power consumption, flat and high gain (S21) were achieved through the use of a proposed two stage DA, and current-reused technique with a peaking inductor. An RL terminating network for the gate transmission line, and an under-damped Q-factor for second-order NF frequency response achieved a flat response and, low noise figure (NF). The LNA achieved S21 of 19.8±1.2 dB and an average NF of 3.4±0.36 dB with power dissipation (PD) of only 14.8 mW.

Published in:

TENCON 2010 - 2010 IEEE Region 10 Conference

Date of Conference:

21-24 Nov. 2010