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Impact of Self-Heating in SOI FinFETs on Analog Circuits and Interdie Variability

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8 Author(s)
Monga, U. ; Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Kjeller, Norway ; Aghassi, J. ; Siprak, D. ; Sedlmeir, J.
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In this letter, we present an experimental evaluation of self-heating (SH) effects (SHEs) using S-parameter measurements for both n- and p-type SOI FinFETs. It is revealed that NFETs show a stronger SHE than PFETs, which ultimately leads to a higher variation of the intrinsic gain in NFETs. Our results also show that long-channel devices typically used in analog design show pronounced negative output conductance, which consequently leads to a negative intrinsic gain at low frequencies. Another implication of the strong SHE is that the interdie variability of the isothermal intrinsic gain gets “amplified” at lower frequencies due to SH.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )