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A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity

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6 Author(s)
Clement, N. ; IEMN-CNRS, Avenue Poincaré, BP60069, 59652 Villeneuve d’Ascq, France ; Nishiguchi, K. ; Dufreche, J.F. ; Guerin, D.
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We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq=1.6×10-2 e/Hz1/2 at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.

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Applied Physics Letters  (Volume:98 ,  Issue: 1 )