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Electrothermal characterization of carbon nanotube field effect transistors (CNTFETs)

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3 Author(s)
Chuan-Jia Xing ; Centre for Optical and Electromagnetic Research, Zhejiang University, Hangzhou 310058, China ; Lei-Tao Liu ; Wen-Yan Yin

Electrothermal characterization of single-walled carbon nanotube (SWCNT) field effect transistors (CNTFETs) is performed in this paper. By solving one-dimensional heat conduction equation in the channel self-consistently, self-heating effects on the I-V characteristics, signal delay and cutoff frequency of the CNTFET are studied. Simulated results indicate that the performance degradation of the CNTFET, due to self-heating effect, is quite low than that of silicon-based FET counterparts. Therefore, CNTFETs are good candidates for advanced active devices with low power dissipation and good reliability for high operating temperature.

Published in:

2010 IEEE Electrical Design of Advanced Package & Systems Symposium

Date of Conference:

7-9 Dec. 2010