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Data stability enhancement techniques for nanoscale memory circuits: 7T memory design tradeoffs and options in 80nm UMC CMOS technology

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2 Author(s)
Hong Zhu ; Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong ; Volkan Kursun

SRAM data stability and leakage currents are major concerns in nanometer CMOS technologies. The primary design challenge related to the conventional six-transistor (6T) memory cells is the conflicting set of requirements for achieving read data stability and write ability. A seven-transistor (7T) SRAM cell provides enhanced data stability by isolating the bitlines from data storage nodes during a read operation. The design tradeoffs in a 7T SRAM cell are explored in this paper with a UMC 80nm multi-threshold-voltage CMOS technology that provides a rich set of device options. An electrical performance metric is proposed to evaluate and compare the memory circuits. The multi-threshold-voltage SRAM circuits offering the highest data stability, widest write margin, smallest read and write power consumption, and lowest leakage currents are identified.

Published in:

SoC Design Conference (ISOCC), 2010 International

Date of Conference:

22-23 Nov. 2010