Cart (Loading....) | Create Account
Close category search window
 

Ultrasmooth growth of amorphous silicon films through ion-induced long-range surface correlations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Redondo-Cubero, A. ; Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Madrid E-28049, Spain ; Gago, R. ; Vazquez, L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3535612 

Ultrasmooth amorphous silicon films with a constant roughness below 0.2 nm were produced for film thickness up to ∼1 μm by magnetron sputtering under negative voltage substrate biasing (100–400 V). In contrast, under unbiased conditions the roughness of the resulting mounded films increased linearly with growth time due to shadowing effects. A detailed analysis of the amorphous film growth dynamics proves that the bias-induced ultrasmoothness is produced by a downhill mass transport process that leads to an extreme surface leveling inducing surface height correlations up to lateral distances close to 0.5 μm.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 1 )

Date of Publication:

Jan 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.