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Ultrasmooth growth of amorphous silicon films through ion-induced long-range surface correlations

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3 Author(s)
Redondo-Cubero, A. ; Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Madrid E-28049, Spain ; Gago, R. ; Vazquez, L.

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Ultrasmooth amorphous silicon films with a constant roughness below 0.2 nm were produced for film thickness up to ∼1 μm by magnetron sputtering under negative voltage substrate biasing (100–400 V). In contrast, under unbiased conditions the roughness of the resulting mounded films increased linearly with growth time due to shadowing effects. A detailed analysis of the amorphous film growth dynamics proves that the bias-induced ultrasmoothness is produced by a downhill mass transport process that leads to an extreme surface leveling inducing surface height correlations up to lateral distances close to 0.5 μm.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 1 )

Date of Publication:

Jan 2011

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