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Microwave Study of {\rm FeSe}_{0.3}{\rm Te}_{0.7} Thin Film by {\rm TE}_{011} -Mode Sapphire Dielectric Resonator

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10 Author(s)
Wu, Y. ; Phys. Dept., Univ. of Sci. & Technol. Beijing, Beijing, China ; Zhou, S.Y. ; Wang, X.Y. ; Cao, L.X.
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High quality epitaxial thin films of FeSe1-xTex (x=0-1) have been successfully fabricated. Their superconducting transition temperatures are around 8-13 K. Microwave properties of a film (x=0.7) was studied by a sapphire dielectric cavity at 9.315 GHz. The cavity, which has a quality factor of 45000 in room temperature with TE011-mode, is specially designed for the measurement of small samples with the sapphire cylinder having a small hole in the center. Thin film samples with dimension of 1-2 mm can be put in the middle of the hole, supported by a very thin sapphire rod. The cavity is sealed in a vacuum chamber soaked in the liquid 4He and the temperature of the thin sapphire rod (hence the sample) can be controlled from 1.6 K to 60 K with a stability about ±1 mK. Temperature dependence of transmission response and Q-factors were measured by a network analyser (Agilent N5230C). The results showed a clear signature of multi-gap superconductivity. No evidences of existence of node in the energy gap were found as the normalized change in the surface reactance and the corresponding normalized change in the in-plane penetration depth have flat dependence at low temperatures.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:21 ,  Issue: 3 )