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HfO2 films of 15 nm were deposited using atomic layer deposition at temperatures varying from 110°C to 200°C and then to 300°C on AlGaN/GaN HEMT structures. Devices with 300°C HfO2 show dramatically better ON and OFF-state characteristics under dc biases than those with HfO2 deposited at lower temperatures. High-resolution X-ray diffraction, together with X-ray reflectivity measurements, confirms the superior film quality of the 300°C HfO2 in comparison to the lower temperature grown films.
Date of Publication: March 2011