By Topic

Modification of the Einstein equations of majority- and minority-carriers with band gap narrowing effect in n-type degenerate silicon with degenerate approximation and with non-parabolic energy bands

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zhi-Xiong Xiao ; Inst. of Microelectron., Peking Univ., Beijing, China ; Tong-Li Wei

A new idea is presented for a modification of Einstein equations of the majority- and minority-carriers with the band gap narrowing effect in an n-type degenerate and uniformly-doped silicon with degenerate approximation and with nonparabolic energy bands. It may imply that the Einstein equation may be one factor for the increase of the minority-carrier diffusion coefficient at high doping levels

Published in:

IEEE Transactions on Electron Devices  (Volume:44 ,  Issue: 5 )