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The Effect of Dynamic Bias Stress on the Photon-Enhanced Threshold Voltage Instability of Amorphous HfInZnO Thin-Film Transistors

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10 Author(s)
Kyoung-Seok Son ; Display Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea ; Hyun-Suk Kim ; Wan-Joo Maeng ; Ji-Sim Jung
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The electrical stability of amorphous HfInZnO (HIZO) thin-film transistors (TFTs) was investigated under static and dynamic stress conditions, with simultaneous visible light radiation. The extent of device degradation is found to be strongly sensitive to the gate voltage, pulse duty ratio, pulse frequency, and exposure to visible light. Dynamic stress experiments demonstrate that highly stable devices can be realized by adjusting the pulse duty ratio and frequency, which suggests that amorphous HIZO TFTs are a promising candidate of switching devices for large-area high-resolution AMLCD applications.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )