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N-Channel Germanium MOSFET Fabricated Below 360 ^{ \circ}\hbox {C} by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs

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4 Author(s)
Jin-Hong Park ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Kuzum, D. ; Jung, Woo-Shik ; Saraswat, K.C.

Below 360°C, we demonstrate germanium (Ge) n+/p junction diode and n-channel Ge metal-oxide-semiconductor field-effect transistor (MOSFET) with a low temperature Al/Al2O3/GeO2 gate stack for monolithic 3-D integration using a metal-induced dopant activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow (~100 nm) source/drain junctions with very low resistivity (5.2 × 10-4 Ω-cm) are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (~104 and ~103, respectively) are obtained in this n-channel Ge MOSFET.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )

Date of Publication:

March 2011

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