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Planar Nearly Ideal Edge-Termination Technique for GaN Devices

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2 Author(s)
Ozbek, A.M. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Baliga, B.Jayant

In this letter, a simple edge termination is described which can be used to achieve nearly ideal parallel-plane breakdown voltage for GaN devices. This technique involves implanting a neutral species on the edges of devices to form a high-resistive amorphous layer. With this termination, formed by using argon implantation, the breakdown voltage of GaN Schottky barrier diodes was increased from 300 V for unterminated diodes to 1650 V after termination.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )