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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:32 Issue:3 Help

High-Performance 1- \mu\hbox {m} GaN n-MOSFET With MgO/MgO– \hbox {TiO}_{2} Stacked Gate Dielectrics

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4 Author(s)
Ko-Tao Lee ; Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Chih-Fang Huang ; Jeng Gong ; Chia-Tien Lee

Gate length of 1-μm enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgO-TiO2 stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO-TiO2 MOS capacitor can be as low as 6.2 × 10-9 and 6.9 × 10-9 A/cm2 at ±1-V bias, respectively. Through a self-aligned process, superior ID-VD and ID-VG electrical characteristics of a MOSFET were obtained. The maximum drain current is 3.69 × 10-5 A/μm at a gate voltage Vg of 8 V and a drain voltage VD of 10 V. The subthreshold swing is 342 mV/dec, and the ION/IOFF is 5.7 × 104.

Published in:
Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )

Date of Publication: March 2011

Page(s):
306 - 308
ISSN :
0741-3106
INSPEC Accession Number:
11833957
Digital Object Identifier :
10.1109/LED.2010.2096196
Product Type:
Journals & Magazines
Date of Publication :
06 January 2011
Date of Current Version :
22 February 2011
Issue Date :
March 2011
Sponsored by :
IEEE Electron Devices Society

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