Referenced Items are not available for this document.
High-Performance Poly-Si Nanowire Thin-Film Transistors Using the 
Gate Dielectric
High-Performance Poly-Si Nanowire Thin-Film Transistors Using the
High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high- gate dielectric, ultrathin poly-Si NW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 results from the ultrashort gate length , thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
3
)
Date of Publication: March 2011
- Page(s):
- 327 - 329
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11833956
- Digital Object Identifier :
- 10.1109/LED.2010.2095493
- Product Type:
- Journals & Magazines
- Date of Publication :
- 06 January 2011
- Date of Current Version :
- 22 February 2011
- Issue Date :
- March 2011
- Sponsored by :
- IEEE Electron Devices Society
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