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This letter reports new findings on the temperature dependence of mismatching properties in nanoscale uniaxial-strained pMOSFETs. Our results reveal that the temperature dependence of drain current mismatch can be modulated by uniaxial strain. In the high gate-voltage overdrive linear region, the compressively strained device shows smaller increment in drain current mismatch than the unstrained counterpart as temperature decreases. In the high saturation region, opposite to the unstrained case, the drain current mismatch of the compressively strained device decreases with temperature. The underlying mechanism is the larger temperature sensitivity of carrier mobility for the strained device.