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Optimum collector width of VLSI bipolar transistors for maximum f max at high current densities

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2 Author(s)
Kumar, M.J. ; Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India ; Datta, K.

A simple analytical model for optimum collector epi-layer thickness Wepi to maximize fmax of VLSI bipolar transistors having reach-through collector is reported. Numerical and analytical results for Wepi are compared to verify the validity of our model for the optimum collector epi-layer thickness at high current densities

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 5 )