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A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices

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3 Author(s)
Hsin-Hsien Li ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Yu-Lin Chu ; Ching-Yuan Wu, Ph.D.

A novel charge-pumping method using dc source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities. The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions. The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 5 )