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27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier

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13 Author(s)
van Waasen, S. ; Dept. of Solid-State Electron, Gerhard-Mercator-Univ. Duisburg, Germany ; Umbach, A. ; Auer, U. ; Back, H.-G.
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An InP-based monolithic integrated photoreceiver with a bandwidth of 27 GHz is presented. The device consists of a waveguide fed pin-photodiode and a traveling wave amplifier with coplanar waveguides based on four InAlAs/InGaAs/InP-HFET. The integration concept, receiver design, fabrication process and characterization are shown. The presented concept offers a potential for bit rates in the 100 Gb/s range.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Date of Conference:

3-6 Nov. 1996

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