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Field Dependence of Porous Low- k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions

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3 Author(s)
Lee, S.C. ; Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Oates, A.S. ; Chang, K.M.

We investigate the electric field (E) dependence of the breakdown of porous low-k dielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull β increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E-n characteristics.

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Device and Materials Reliability, IEEE Transactions on  (Volume:11 ,  Issue: 1 )