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High-Power 2.2- \mu m Diode Lasers With Metamorphic Arsenic-Free Heterostructures

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5 Author(s)
Kipshidze, G. ; Dept. of Electr. & Comput. Eng., State Univ. of New York at Stony Brook, New York, NY, USA ; Hosoda, T. ; Sarney, W.L. ; Shterengas, L.
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Metamorphic virtual substrates with lattice constants 0.9% larger than those of GaSb were developed by solid-source molecular beam epitaxy. The mismatch between the parent GaSb and the virtual substrate was accommodated by a network of misfit dislocations formed in GaInSb buffer layers with linearly graded indium and gallium compositions. Arsenic-free laser heterostructures emitting at 2.2 μm at room temperature were grown on virtual substrates. The antimony was the only group V element used in growth. These novel diode lasers operate at room temperature and generate above 1.4 W of continuous-wave (CW) power.

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 5 )

Date of Publication:

March1, 2011

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