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Interfacial reactions in Ru metal-electrode/HfSiON gate stack structures studied by synchrotron-radiation photoelectron spectroscopy

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8 Author(s)
Kamada, H. ; Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan ; Toyoda, S. ; Tanimura, T. ; Kumigashira, H.
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We have investigated the thermal stability and interfacial reactions of a Ru/HfSiON gate stack structure, annealed in a nitrogen ambient, using synchrotron-radiation photoelectron spectroscopy. We find that in HfSiON films with Ru metal, competition between catalyst-induced oxidation and oxygen or SiO desorption arises upon high-temperature annealing, unlike in the same films without Ru. The desorption reaction during high-temperature annealing at 1050 °C could be caused by the decomposition of an unstable Si oxide component, formed by catalytic oxidation at the interface between the HfSiON layer and the Si substrate after annealing below 850 °C.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 12 )

Date of Publication:

Dec 2010

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