Cart (Loading....) | Create Account
Close category search window
 

Interfacial reactions in Ru metal-electrode/HfSiON gate stack structures studied by synchrotron-radiation photoelectron spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Kamada, H. ; Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan ; Toyoda, S. ; Tanimura, T. ; Kumigashira, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3525584 

We have investigated the thermal stability and interfacial reactions of a Ru/HfSiON gate stack structure, annealed in a nitrogen ambient, using synchrotron-radiation photoelectron spectroscopy. We find that in HfSiON films with Ru metal, competition between catalyst-induced oxidation and oxygen or SiO desorption arises upon high-temperature annealing, unlike in the same films without Ru. The desorption reaction during high-temperature annealing at 1050 °C could be caused by the decomposition of an unstable Si oxide component, formed by catalytic oxidation at the interface between the HfSiON layer and the Si substrate after annealing below 850 °C.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 12 )

Date of Publication:

Dec 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.