By Topic

Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
16 Author(s)
Boubanga-Tombet, S. ; Research Institute of Electrical Communication, Tohoku University, 2- 1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan ; Teppe, F. ; Torres, J. ; El Moutaouakil, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel’s current are observed and explained as due to the increase in the carriers’ density and drift velocity.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 26 )