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Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-k-metal-gate material

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2 Author(s)
Hui-Wen Cheng ; Institute of Communications Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan ; Yiming Li

Random work-function (WK) induced threshold voltage fluctuation (σVth) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σVth are studied analytically. The results of this study allow us to identify suitable materials for metal gate and to clarify reduction of the σVth owing to WKF. Among four different gate materials, the titanium nitride possesses the smallest σVth due to small size of metal grains.

Published in:

Computational Electronics (IWCE), 2010 14th International Workshop on

Date of Conference:

26-29 Oct. 2010