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Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer

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8 Author(s)
Chenxin Zhu ; Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People''s Republic of China ; Zongliang Huo ; Zhongguang Xu ; Manhong Zhang
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A high-κ based charge trap flash (CTF) memory structure using bandgap engineered trapping layer HfO2/Al2O3/HfO2 (HAH) has been demonstrated for multilevel cell applications. Compared to a single HfO2 trapping layer, a CTF memory device based on the HAH trapping layer exhibits a larger memory window of 9.2 V, faster program/erase speed, and significantly improved data retention. Enhancements of memory performance and reliability are attributed to the modulation of charge distribution by bandgap engineering in trapping layer. The findings provide a guide for future design of CTF.

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Applied Physics Letters  (Volume:97 ,  Issue: 25 )