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Role of silicon in silicon-indium-zinc-oxide thin-film transistor

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3 Author(s)
Chong, Eugene ; Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea ; Kim, Seung Han ; Lee, Sang Yeol

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Silicon effect on the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films has been investigated for thin-film transistor applications depending on composition ratio and annealing-temperature. X-ray diffraction, x-ray photoelectron spectroscopy, and time-of-flight secondary-ion-mass-spectrometry have been used to characterize the properties of SIZO thin-film channel layer with different Si concentrations and annealing-temperatures. Those results revealed that Si is more strongly binding with oxygen since their high metal-oxygen bonding-strength and low standard electric potential, which result in implying Si, allow the amorphous oxide semiconductors to achieve oxide-lattice structures even at a low-temperature of 150 °C.

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Applied Physics Letters  (Volume:97 ,  Issue: 25 )