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In-depth analysis of the CuIn1-xGaxSe2 film for solar cells, structural and optical characterization

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7 Author(s)
Slobodskyy, A. ; Light Technology Institute, Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131 Karlsruhe, Germany ; Slobodskyy, T. ; Ulyanenkova, T. ; Doyle, S.
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Space-resolved x-ray diffraction measurements of gradient-etched CuIn1-xGaxSe2 (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter of CIGS layer growth dynamics, the absorber thickness-dependent stress in the molybdenum back contact, is analyzed. Texturing of grains and quality of the polycrystalline absorber layer are correlated with the intentional composition gradients (band gap grading). The band gap gradient is determined by space-resolved photoluminescence measurements and correlated with composition and strain profiles.

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Applied Physics Letters  (Volume:97 ,  Issue: 25 )