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Development of Embedded STT-MRAM for Mobile System-on-Chips

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2 Author(s)
Kangho Lee ; Adv. Technol., Qualcomm Incoporated, San Diego, CA, USA ; Kang, S.H.

Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) has been considered a promising technology for future mobile system-on-chip memories due to negligible static leakage power, high-speed read/write operations, and unlimited read/write endurance. In this paper, we address key challenges and recent advances for enabling embedded STT-MRAM on a deeply scaled CMOS logic platform.

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Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 1 )