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Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

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9 Author(s)
Maslova, O.A. ; Laboratoire de Génie Électrique de Paris, CNRS UMR8507, SUPELEC, Univ. Paris-Sud, UPMC Univ. Paris 06; 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France ; Alvarez, J. ; Gushina, E.V. ; Favre, W.
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Heterojunctions made of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) are examined by conducting probe atomic force microscopy. Conductive channels at both (n)a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the c-Si surface in agreement with previous planar conductance measurements. The presence of a hole gas in (p)a-Si:H/(n)c-Si structures implies a quite large valence band offset (EVc-Si-EVa-Si:H>0.25 eV).

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 25 )

Date of Publication:

Dec 2010

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