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Enhancement of perpendicular exchange bias in [Pd/Co]/FeMn thin films by tailoring the magnetoelastically induced perpendicular anisotropy

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6 Author(s)
Lin, Lin ; Department of Electrical and Computer Engineering, Biomagnetics Laboratory (BML), National University of Singapore, Singapore 117576, Singapore ; Thiyagarajah, Naganivetha ; Joo, Ho Wan ; Heo, Jang
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The effects of magnetoelastically induced perpendicular anisotropy, KFM,me, on the perpendicular exchange bias (PEB) characteristics in [Pd/Co]5/Fe50Mn50 thin films have been explored by inserting ultrathin CoFe magnetic layers with different thicknesses, compositions, and Ar sputtering gas pressures (PAr,CoFe) at the interface between [Pd/Co]5 and FeMn. It was clearly found that the [Pd/Co]5/CoFe/FeMn with CoFe sputtered at a low PAr,CoFe showed great enhancement in PEB due to the development of intrinsic compressive stress in the CoFe resulting in improving KFM,me and interfacial exchange coupling. Additionally, this effect was more significant for Co80Fe20 insertion than Co90Fe10 due to its larger magnetostriction.

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Applied Physics Letters  (Volume:97 ,  Issue: 24 )