By Topic

Evaluating the Aluminum-Alloyed \hbox {p}^{+} -Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy Measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Robert Woehl ; Fraunhofer Institut für Solare Energiesysteme, Freiburg, Germany ; Paul Gundel ; Jonas Krause ; Karola Ruhle
more authors

Surface-passivated and surface-unpassivated aluminum-alloyed p+-layers are characterized. By varying the firing conditions and the thickness of the screen-printed aluminum paste, different sheet resistances Rsh of the p+-layer were fabricated. The emitter saturation current density J0e plotted versus Rsh follows distinctly different trends for the passivated and unpassivated samples. An aluminum paste with a boron additive achieves a much higher doping concentration and a lower sheet resistance but nevertheless follows the same J0e curves as the pure Al paste. The aluminum p+-layer was quantitatively analyzed with microphotoluminescence and Fano-Raman measurements. The latter shows an increased defect recombination at the interface between the p+-layer and the moderately doped Si bulk. The lower Shockley-Read-Hall lifetime in this region can be attributed to a high defect concentration in the most highly doped layer, represents an impediment to the reduction of J0e for Al-doped emitter regions, and needs to be optimized in future investigations.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 2 )