By Topic

Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ioannidis, E.G. ; Aristotle Univ. of Thessaloniki, Thessaloniki, Greece ; Tsormpatzoglou, A. ; Tassis, D.H. ; Dimitriadis, C.A.
more authors

An analytical threshold-voltage model of short-channel undoped symmetrical double-gate metal-oxide-semiconductor field-effect transistors including positive or negative interface charges near the drain is presented. The threshold-voltage model is derived based on an analytical solution for the potential distribution along the channel in the subthreshold region. Both potential and threshold-voltage models are compared with the Atlas simulation results, with variables being the device dimensions, the interface-charge region length and the interface-charge density. A good agreement between the model and simulation results has been observed by calibrating as a constant parameter the gate voltage included in the position of the minimum potential and the carrier charge-sheet density at the potential minimum that is adequate to achieve the turn-on condition.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 2 )