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Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes

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4 Author(s)
Qiugui Zhou ; Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA ; Mcintosh, D. ; Han-Din Liu ; Campbell, Joe C.

We report reach-through structure 4H-SiC avalanche photodiodes isolated by proton implantation. These devices achieved low dark current (85 pA at a gain of 1000) and high external quantum efficiency ( 75% at 260 nm).

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 5 )

Date of Publication:

March1, 2011

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