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Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy

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10 Author(s)
Liu, W.J. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Yu, H.Y. ; Xu, S.H. ; Zhang, Q.
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Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene field-effect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer-graphene (SLG) FETs with ΔWFintrinsic >; 0, while Rodd is negative for Al/SLG devices with ΔWFintrinsic <; 0, where ΔWFintrinsic is defined as the work function difference between metal and intrinsic graphene.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )