By Topic

Effects of the Size of the Doped SiC Nanoparticles on the Critical Current Density of the Ti-Sheathed MgB _{2} Superconducting Wires

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
G. Liang ; Department of Physics, Sam Houston State University, Huntsville, Texas, USA ; H. Fang ; Z. P. Luo ; S. Keith
more authors

The effects of the grain size of the doped SiC nanoparticles on the critical current density (Jc) of the Ti-sheathed MgB2 superconducting wires were studied. The concentration of the SiC dopant was 10% and the sizes of the SiC particles were 20 nm, 45 nm, and 123 nm. Contrary to the Jc results reported on the SiC-doped Fe-sheathed MgB2 wires, we found that the Jc for the Ti-sheathed MgB2 wires decreased with the size of the SiC particles. We also found that the Jc is greater than that of the undoped MgB2 wires only for the wires with 123 nm SiC size. This unusual dependence of Jc on the size of the SiC dopant is discussed in association with the results from the magnetization, electrical resistivity, x-ray diffraction, and transmission electron microscopy measurements.

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:21 ,  Issue: 3 )